JOPSS - Search Results

Journal Articles

Film growth method by means of ion beam sputtering

Yamaguchi, Kenji

Shirisaidokei Handotai No Kagaku To Gijutsu, p.113 - 121, 2014/09

This article describes first the basic aspects of sputtering phenomena based on ion beam - solid interactions, followed by introduction of ion beam sputter deposition (IBSD) method for thin film fabrication. The article further introduces the experimental apparatus for IBSD application, equipped with an ion beam irradiation system for sputter-etching of the substrate surface. It is shown that this method is suitable for fabrication of semiconducting iron silicide film on Si substrate. The experimental results revealed that the obtained thin film is highly-oriented and continuous, forming atomically flat interface between film and the substrate.

Journal Articles

Effect of thermal annealing on the photoluminescence from -FeSi films on Si substrate

Yamaguchi, Kenji; Shimura, Kenichiro; Udono, Haruhiko*; Sasase, Masato*; Yamamoto, Hiroyuki; Shamoto, Shinichi; Hojo, Kiichi

Thin Solid Films, 508(1-2), p.367 - 370, 2006/06

https://doi.org/10.1016/j.tsf.2005.07.354

Times Cited Count：12 Percentile：49.71(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Characterization of photoluminescence of -FeSi thin film fabricated on Si and SIMOX substrate by IBSD method

Shimura, Kenichiro; Yamaguchi, Kenji; Sasase, Masato*; Yamamoto, Hiroyuki; Shamoto, Shinichi; Hojo, Kiichi

Vacuum, 80(7), p.719 - 722, 2006/05

https://doi.org/10.1016/j.vacuum.2005.11.034

Times Cited Count：9 Percentile：34.33(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Nanoscopic observation of structural and compositional changes for -FeSi $_{2}$ thin film formation processes

Yamamoto, Hiroyuki; Yamaguchi, Kenji; Hojo, Kiichi

Thin Solid Films, 461(1), p.99 - 105, 2004/08

https://doi.org/10.1016/j.tsf.2004.02.079

Times Cited Count：10 Percentile：46.84(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Effect of surface treatment of Si substrate on the crystal structure of FeSi $_{2}$ thin film formed by ion beam sputter deposition method

Haraguchi, Masaharu*; Yamamoto, Hiroyuki; Yamaguchi, Kenji; Nakanoya, Takamitsu; Saito, Takeru; Sasase, Masato*; Hojo, Kiichi

Nuclear Instruments and Methods in Physics Research B, 206, p.313 - 316, 2003/05

https://doi.org/10.1016/S0168-583X(03)00752-3

Times Cited Count：17 Percentile：72.74(Instruments & Instrumentation)

no abstracts in English

JAEA Reports

Summer Seminar on "Silicide Semiconductors" 2002; August 5-6, 2002, Japan Atomic Energy Research Institute, Tokai Research Establishment

Yamaguchi, Kenji; Yamamoto, Hiroyuki; Hojo, Kiichi; Udono, Haruhiko*

JAERI-Conf 2002-014, 60 Pages, 2003/01

JAERI-Conf-2002-014.pdf:5.35MB

Some silicides are known to be promising as new types of semiconductor, being less hazardous to the environment than conventional compound semiconductors. This seminar was held at Advanced Science Research Center in JAERI (Japan Atomic Energy Research Institute) - Tokai on August 5th and 6th, 2002, where 1 invited lecture, 10 oral and 20 poster presentations were given. It was successfully carried out with the participants reaching as many as 70 people, with plenty of fruitful discussion. This summary is the proceedings of the seminar.

Journal Articles

Development of semiconductor material (-FeSi film) for next generation using IBSD method

Heya, Akira*; Haraguchi, Masaharu*; Yamamoto, Hiroyuki; Saito, Takeru*; Yamaguchi, Kenji; Hojo, Kiichi

Ishikawaken Kogyo Shikenjo Heisei-14-Nendo Kenkyu Hokoku, (52), p.9 - 12, 2003/00

no abstracts in English

Journal Articles

Effect of treatment for Si substrate on the crystal structure of -FeSi $_{2}$ thin film

Haraguchi, Masaharu; Yamamoto, Hiroyuki; Yamaguchi, Kenji; Sasase, Masato*; Nakanoya, Takamitsu; Saito, Takeru; Hojo, Kiichi

Shinku, 45(10), p.749 - 753, 2002/10

https://doi.org/10.3131/jvsj.45.749

no abstracts in English

Journal Articles

Surface chemical states and oxidation resistivity of "ecologically friendly" semiconductor (-FeSi $_{2}$ ) thin films

Saito, Takeru; Yamamoto, Hiroyuki; Sasase, Masato*; Nakanoya, Takamitsu; Yamaguchi, Kenji; Haraguchi, Masaharu*; Hojo, Kiichi

Thin Solid Films, 415(1-2), p.138 - 142, 2002/08

https://doi.org/10.1016/S0040-6090(02)00555-2

Times Cited Count：20 Percentile：67.09(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Fabrication of highly oriented -FeSi $_{2}$ by ion beam sputter deposition

Nakanoya, Takamitsu; Sasase, Masato*; Yamamoto, Hiroyuki; Saito, Takeru; Hojo, Kiichi

Shinku, 45(1), p.26 - 31, 2002/01

https://doi.org/10.3131/jvsj.45.26

no abstracts in English

Journal Articles

Formation of "Environmentally friendly" semiconductor (-FeSi $_{2}$ ) thin films prepared by ion beam sputter deposition (IBSD) method

Sasase, Masato*; Nakanoya, Takamitsu; Yamamoto, Hiroyuki; Hojo, Kiichi

Thin Solid Films, 401(1-2), p.73 - 76, 2001/12

https://doi.org/10.1016/S0040-6090(01)01485-7

Times Cited Count：32 Percentile：80.45(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Investigation on the -FeSi $_{2}$ formation mechanisms on Si(111) substrate by means of SR-XPS

Saito, Takeru; Yamamoto, Hiroyuki; Hojo, Kiichi; Matsubayashi, Nobuyuki*; Imamura, Motoyasu*; Shimada, Hiromichi*

Photon Factory Activity Report 2000, P. 82, 2000/00

http://pfwww.kek.jp/acr2000/b/y00p082.pdf

no abstracts in English

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Film growth method by means of ion beam sputtering

Effect of thermal annealing on the photoluminescence from -FeSi films on Si substrate

Characterization of photoluminescence of -FeSi thin film fabricated on Si and SIMOX substrate by IBSD method

Nanoscopic observation of structural and compositional changes for -FeSi $_{2}$ thin film formation processes

Effect of surface treatment of Si substrate on the crystal structure of FeSi $_{2}$ thin film formed by ion beam sputter deposition method

Summer Seminar on "Silicide Semiconductors" 2002; August 5-6, 2002, Japan Atomic Energy Research Institute, Tokai Research Establishment

Development of semiconductor material (-FeSi film) for next generation using IBSD method

Effect of treatment for Si substrate on the crystal structure of -FeSi $_{2}$ thin film

Surface chemical states and oxidation resistivity of "ecologically friendly" semiconductor (-FeSi $_{2}$ ) thin films

Fabrication of highly oriented -FeSi $_{2}$ by ion beam sputter deposition

Formation of "Environmentally friendly" semiconductor (-FeSi $_{2}$ ) thin films prepared by ion beam sputter deposition (IBSD) method

Investigation on the -FeSi $_{2}$ formation mechanisms on Si(111) substrate by means of SR-XPS